Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well

We investigated the high-carrier screening of macroscopic polarization fields in GaN quantum wells (QWs) using a variational wave function for electrons and holes. In particular, we studied of the influence of free-carrier screening on the photoluminescence (PL) energy emission and carrier lifetime in the QW. We show that the energy transition between electrons and holes are explained well by the freecarrier screening effect that compensates for the built-in electric field in the QW. r 2007 Elsevier Ltd. All rights reserved. PACS: 78.20.Bh; 78.55. m; 78.67.De